半导体材料

发展编辑

1833年，英國的法拉第發現硫化銀是半導體材料，因為它的電阻隨著溫度上升而降低。
1874年，德國的布勞恩注意到硫化物的電導率與所加電壓的方向有關，這就是半導體的整流作用。
1947年12月23日，巴丁与布拉坦進一步使用點接觸電晶體製作出一個語音放大器，電晶體正式發明。
1958年9月12日，美國的基尔比，細心地切了一塊鍺作為電阻，再用一塊pn接面做為電容，製造出一個震盪器電路。

分类编辑

以原料分为：

元素半导体材料：以单一元素组成的半导体，属于这一材料的有硼、金刚石、锗、硅、灰锡、锑、硒、碲等，其中以锗、硅、锡研究较早，制备工艺相对成熟。
复合半导体材料：由两种或两种以上无机物化合成的半导体，种类繁多，已知的二元化合物就有数百种。
- 三五半导体：由Ⅲ族元素（如Al、Ga、In）和Ⅴ族元素（如P、As、Sb）组成，比如砷化鎵（GaAs）；它们都具有闪锌矿结构，在应用方面仅次于Ge、Si。
- 二六半导体：ⅡB族元素（如Zn、Cd、Hg）和Ⅵ族元素（如S、Se、Te）組成的化合物，是一些重要的光电材料；硫化鋅（ZnS）、碲化鎘（CdTe）、碲化汞（HgTe）具有闪锌矿结构。
- 四四半导体：碳化矽（SiC）和矽鍺合金都具有闪锌矿结构。
有機半導體：同時是有機物質的半導體。

列表编辑

半導體材料列表
族	元素		化學式	能隙 (eV)	直接帶隙和間接帶隙
IV	1	硅	Si	1.12^[1]^[2]	間接带隙
IV	1	Germanium	Ge	0.67^[1]^[2]	間接帶隙
IV	1	Material properties of diamond（英语：Material properties of diamond）	C	5.47^[1]^[2]	間接帶隙
IV	1	锡, α-Sn	Sn	0^[3]^[4]	半金属 (能带理论)
IV	2	碳化硅, 3C-SiC	SiC	2.3^[1]	間接帶隙
IV	2	碳化硅, 4H-SiC	SiC	3.3^[1]	間接帶隙
IV	2	碳化硅, 6H-SiC（英语：6H-SiC）	SiC	3.0^[1]	間接帶隙
VI	1	硫, 硫的同素异形体	S₈	2.6^[5]
VI	1	硒	Se	1.83 - 2.0^[6]	間接帶隙
VI	1	硒	Se	2.05	間接帶隙
VI	1	碲	Te	0.33^[7]
III-V	2	氮化硼, cubic	BN	6.36^[8]	間接帶隙
III-V	2	氮化硼, hexagonal	BN	5.96^[8]	quasi-direct
III-V	2	氮化硼	BN	5.5^[9]
III-V	2	磷化硼	BP	2.1^[10]	間接帶隙
III-V	2	砷化硼	BAs	1.82	直接帶隙
III-V	2	砷化硼	B₁₂As₂	3.47	間接帶隙
III-V	2	氮化鋁	AlN	6.28^[1]	直接帶隙
III-V	2	磷化铝	AlP	2.45^[2]	間接帶隙
III-V	2	砷化铝	AlAs	2.16^[2]	間接帶隙
III-V	2	锑化铝	AlSb	1.6/2.2^[2]	直接帶隙/direct
III-V	2	氮化鎵	GaN	3.44^[1]^[2]	直接帶隙
III-V	2	磷化鎵	GaP	2.26^[1]^[2]	間接帶隙
III-V	2	Gallium arsenide（英语：Gallium arsenide）	GaAs	1.42^[1]^[2]	直接帶隙
III-V	2	銻化鎵	GaSb	0.73^[1]^[2]	直接帶隙
III-V	2	氮化銦	InN	0.7^[1]	直接帶隙
III-V	2	磷化銦	InP	1.35^[1]	直接帶隙
III-V	2	砷化铟	InAs	0.36^[1]	直接帶隙
III-V	2	锑化铟	InSb	0.17^[1]	直接帶隙
II-VI	2	硒化镉	CdSe	1.74^[2]	直接帶隙
II-VI	2	硫化镉	CdS	2.42^[2]	直接帶隙
II-VI	2	碲化镉	CdTe	1.49^[2]	直接帶隙
II-VI	2	氧化鋅	ZnO	3.37^[2]	直接帶隙
II-VI	2	硒化锌	ZnSe	2.7^[2]	直接帶隙
II-VI	2	硫化锌	ZnS	3.54/3.91^[2]	直接帶隙
II-VI	2	碲化锌	ZnTe	2.3^[2]	直接帶隙
I-VII	2	氯化亚铜	CuCl	3.4^[11]	直接帶隙
I-VI	2	Copper sulfide（英语：Copper sulfide）	Cu₂S	1.2^[10]	間接帶隙
IV-VI	2	硒化铅	PbSe	0.26^[7]	直接帶隙
IV-VI	2	硫化铅	PbS	0.37^[12]
IV-VI	2	碲化铅	PbTe	0.32^[1]
IV-VI	2	硫化亚锡	SnS	1.3/1.0^[13]	直接帶隙/間接帶隙
IV-VI	2	二硫化锡	SnS₂	2.2^[14]
IV-VI	2	碲化亚锡	SnTe	0.18
IV-VI	3	Lead tin telluride（英语：Lead tin telluride）	Pb_1−xSn_xTe	0-0.29
V-VI	2	碲化鉍	Bi₂Te₃	0.13^[1]
II-V	2	磷化镉	Cd₃P₂	0.5^[15]
II-V	2	砷化鎘	Cd₃As₂	0
II-V	2	磷化锌	Zn₃P₂	1.5^[16]	直接帶隙
II-V	2	二磷化锌	ZnP₂	2.1^[17]
II-V	2	砷化锌	Zn₃As₂	1.0^[18]
II-V	2	锑化锌	Zn₃Sb₂
氧	2	二氧化鈦, 锐钛矿	TiO₂	3.20^[19]	間接帶隙
氧	2	二氧化鈦, 金红石	TiO₂	3.0^[19]	直接帶隙
氧	2	二氧化鈦, 板鈦礦	TiO₂	3.26^[19]
氧	2	氧化亚铜	Cu₂O	2.17^[20]
氧	2	氧化铜	CuO	1.2
氧	2	二氧化鈾	UO₂	1.3
氧	2	二氧化锡	SnO₂	3.7
氧	3	钛酸钡	BaTiO₃	3
氧	3	钛酸锶	SrTiO₃	3.3
氧	3	铌酸锂	LiNbO₃	4
V-VI	2	monoclinic 二氧化钒	VO₂	0.7^[21]	光學帶隙
	2	碘化鉛	PbI₂	2.4^[22]
	2	二硫化钼	MoS₂	1.23 eV (2H)^[23]	間接帶隙
	2	Gallium(II) selenide（英语：Gallium(II) selenide）	GaSe	2.1	間接帶隙
	2	硒化铟	InSe	1.26-2.35 eV^[24]	直接帶隙 (2D間接帶隙)
	2	硫化亚锡	SnS	>1.5 eV	直接帶隙
	2	硫化铋	Bi₂S₃	1.3^[1]
Magnetic, diluted (DMS)^[25]	3	Gallium manganese arsenide（英语：Gallium manganese arsenide）	GaMnAs
Magnetic, diluted (DMS)	3	Lead manganese telluride	PbMnTe
	4	Lanthanum calcium manganate	La_0.7Ca_0.3MnO₃
	2	氧化亚铁	FeO	2.2 ^[26]
	2	一氧化镍	NiO	3.6–4.0	直接帶隙^[27]^[28]
	2	Europium(II) oxide（英语：Europium(II) oxide）	EuO
	2	硫化亚铕	EuS
	2	溴化铬	CrBr₃
其它	3	Copper indium selenide（英语：Copper indium selenide）, CIS	CuInSe₂	1	直接帶隙
其它	3	Silver gallium sulfide	AgGaS₂
其它	3	Zinc silicon phosphide	ZnSiP₂	2.0^[10]
其它	2	三硫化二砷雌黃	As₂S₃	2.7^[29]	直接帶隙
其它	2	硫化砷雄黄	As₄S₄
其它	2	Platinum silicide（英语：Platinum silicide）	PtSi
其它	2	碘化铋	BiI₃
其它	2	碘化汞	HgI₂
其它	2	溴化亚铊	TlBr	2.68^[30]
其它	2	硫化银	Ag₂S	0.9^[31]
其它	2	Iron disulfide（英语：Iron disulfide）	FeS₂	0.95^[32]
其它	4	Copper zinc tin sulfide（英语：Copper zinc tin sulfide）, CZTS	Cu₂ZnSnS₄	1.49	直接帶隙
其它	4	Copper zinc antimony sulfide（英语：Copper zinc antimony sulfide）, CZAS	Cu_1.18Zn_0.40Sb_1.90S_7.2	2.2^[33]	直接帶隙
其它	3	Copper tin sulfide, CTS	Cu₂SnS₃	0.91^[10]	直接帶隙

合金表编辑

半導體材料合金列表
族	元素	材料	化學式	能隙 (eV)		直接帶隙和間接帶隙
族	元素	材料	化學式	下	上	直接帶隙和間接帶隙
IV-VI	3	Lead tin telluride（英语：Lead tin telluride）	Pb_1−xSn_xTe	0	0.29
IV	2	矽鍺	Si_1−xGe_x	0.67	1.11^[1]	直接帶隙/間接帶隙
IV	2	Silicon-tin（英语：Silicon-tin）	Si_1−xSn_x	1.0	1.11	間接帶隙
III-V	3	Aluminium gallium arsenide（英语：Aluminium gallium arsenide）	Al_xGa_1−xAs	1.42	2.16^[1]	直接帶隙/間接帶隙
III-V	3	Indium gallium arsenide（英语：Indium gallium arsenide）	In_xGa_1−xAs	0.36	1.43	直接帶隙
III-V	3	磷化銦鎵	In_xGa_1−xP	1.35	2.26	直接帶隙/間接帶隙
III-V	3	Aluminium indium arsenide（英语：Aluminium indium arsenide）	Al_xIn_1−xAs	0.36	2.16	直接帶隙/間接帶隙
III-V	3	Aluminium gallium antimonide（英语：Aluminium gallium antimonide）	Al_xGa_1−xSb	0.7	1.61	直接帶隙/間接帶隙
III-V	3	Aluminium indium antimonide（英语：Aluminium indium antimonide）	Al_xIn_1−xSb	0.17	1.61	直接帶隙/間接帶隙
III-V	3	Gallium arsenide nitride	GaAsN
III-V	3	Gallium arsenide phosphide（英语：Gallium arsenide phosphide）	GaAsP	1.43	2.26	直接帶隙/間接帶隙
III-V	3	Aluminium arsenide antimonide（英语：Aluminium arsenide antimonide）	AlAsSb	1.61	2.16	間接帶隙
III-V	3	Gallium arsenide antimonide（英语：Gallium arsenide antimonide）	GaAsSb	0.7	1.42^[1]	直接帶隙
III-V	3	Aluminium gallium nitride（英语：Aluminium gallium nitride）	AlGaN	3.44	6.28	直接帶隙
III-V	3	Aluminium gallium phosphide（英语：Aluminium gallium phosphide）	AlGaP	2.26	2.45	間接帶隙
III-V	3	Indium gallium nitride（英语：Indium gallium nitride）	InGaN	2	3.4	直接帶隙
III-V	3	Indium arsenide antimonide（英语：Indium arsenide antimonide）	InAsSb	0.17	0.36	直接帶隙
III-V	3	Indium gallium antimonide（英语：Indium gallium antimonide）	InGaSb	0.17	0.7	直接帶隙
III-V	4	Aluminium gallium indium phosphide（英语：Aluminium gallium indium phosphide）	AlGaInP			直接帶隙/間接帶隙
III-V	4	Aluminium gallium arsenide phosphide	AlGaAsP
III-V	4	Indium gallium arsenide phosphide（英语：Indium gallium arsenide phosphide）	InGaAsP
III-V	4	Indium gallium arsenide antimonide（英语：Indium gallium arsenide antimonide）	InGaAsSb
III-V	4	Indium arsenide antimonide phosphide（英语：Indium arsenide antimonide phosphide）	InAsSbP
III-V	4	Aluminium indium arsenide phosphide	AlInAsP
III-V	4	Aluminium gallium arsenide nitride	AlGaAsN
III-V	4	Indium gallium arsenide nitride	InGaAsN
III-V	4	Indium aluminium arsenide nitride	InAlAsN
III-V	4	Gallium arsenide antimonide nitride	GaAsSbN
III-V	5	Gallium indium nitride arsenide antimonide	GaInNAsSb
III-V	5	Gallium indium arsenide antimonide phosphide（英语：Gallium indium arsenide antimonide phosphide）	GaInAsSbP
II-VI	3	碲化鋅鎘, CZT	CdZnTe	1.4	2.2	直接帶隙
II-VI	3	Mercury cadmium telluride（英语：Mercury cadmium telluride）	HgCdTe	0	1.5
II-VI	3	Mercury zinc telluride（英语：Mercury zinc telluride）	HgZnTe	0	2.25
II-VI	3	Mercury zinc selenide	HgZnSe
II-V	4	Zinc cadmium phosphide arsenide（英语：Zinc cadmium phosphide arsenide）	(Zn_1−xCd_x)₃(P_1−yAs_y)₂^[34]	0^[35]	1.5^[36]
其它	4	Copper indium gallium selenide（英语：Copper indium gallium selenide）, CIGS	Cu(In,Ga)Se₂	1	1.7	直接帶隙

參見编辑

有機半導體

參考文獻编辑

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[ioffe-1] 1.00 ^1.01 ^1.02 ^1.03 ^1.04 ^1.05 ^1.06 ^1.07 ^1.08 ^1.09 ^1.10 ^1.11 ^1.12 ^1.13 ^1.14 ^1.15 ^1.16 ^1.17 ^1.18 ^1.19 ^1.20 NSM Archive - Physical Properties of Semiconductors. www.ioffe.ru. [2010-07-10]. （原始内容存档于2015-09-28）.

[safa-2] 2.00 ^2.01 ^2.02 ^2.03 ^2.04 ^2.05 ^2.06 ^2.07 ^2.08 ^2.09 ^2.10 ^2.11 ^2.12 ^2.13 ^2.14 ^2.15 ^2.16 Safa O. Kasap; Peter Capper. Springer handbook of electronic and photonic materials. Springer. 2006: 54,327. ISBN 978-0-387-26059-4.

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