晶体缺陷

晶体缺陷（英語：crystallographic defect）是指晶体结构中周期性的排列规律被打破的情况^[1]^[2]^[3]^[4]。理想的晶体，具有周期性的晶体结构（这称为“长程有序”）。原子或分子的位置以固定的距离重复，这个距离由晶体的晶格常数决定。然而，在大多数的实际晶体中，原子或分子的排列并非如此完美，这样就造成了晶体缺陷。

主要分类编辑

点缺陷
- 晶格空位（Vacancy defect）或肖特基缺陷（Schottky defect）
- 间隙缺陷（Interstitial defect）或弗伦克尔缺陷（Frenkel defect）
- 杂质替换
线缺陷
- 刃位错（edge dislocation）
- 螺旋位错（screw dislocation）
- 向错（disclination）
面缺陷
- 晶粒边界（grain boundary）
- 反相畴界 (antiphase boundary)
- 堆垛错误（stacking faults）
- 孪晶界（twin boundary）
体缺陷

参考文献编辑

^ P. Ehrhart, Properties and interactions of atomic defects in metals and alloys Archive.is的存檔，存档日期2013-02-03, volume 25 of Landolt-Börnstein, New Series III, chapter 2, p. 88, Springer, Berlin, 1991
^ R. W. Siegel, Atomic Defects and Diffusion in Metals, in Point Defects and Defect Interactions in Metals, J.-I. Takamura (ED.), p. 783, North Holland, Amsterdam, 1982
^ J. H. Crawford and L. M. Slifkin (编). Point Defects in Solids. New York: Plenum Press. 1975.
^ G. D. Watkins, Native defects and their interactions with impurities in silicon, in Defects and Diffusion in Silicon Processing, T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty (eds), vol. 469 of MRS Symposium Proceedings, p. 139, Materials Research Society, Pittsburgh, 1997 ISBN 1558993738

延伸阅读编辑

Hagen Kleinert, Gauge Fields in Condensed Matter, Vol. II, "Stresses and defects" （页面存档备份，存于互联网档案馆）, pp. 743–1456, World Scientific (Singapore, 1989); Paperback ISBN 9971-5-0210-0
Hermann Schmalzried: Solid State Reactions. Verlag Chemie, Weinheim 1981, ISBN 3-527-25872-8.

[Erh91-1] P. Ehrhart, Properties and interactions of atomic defects in metals and alloys Archive.is的存檔，存档日期2013-02-03, volume 25 of Landolt-Börnstein, New Series III, chapter 2, p. 88, Springer, Berlin, 1991

[2] R. W. Siegel, Atomic Defects and Diffusion in Metals, in Point Defects and Defect Interactions in Metals, J.-I. Takamura (ED.), p. 783, North Holland, Amsterdam, 1982

[3] J. H. Crawford and L. M. Slifkin (编). Point Defects in Solids. New York: Plenum Press. 1975.

[4] G. D. Watkins, Native defects and their interactions with impurities in silicon, in Defects and Diffusion in Silicon Processing, T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty (eds), vol. 469 of MRS Symposium Proceedings, p. 139, Materials Research Society, Pittsburgh, 1997 ISBN 1558993738

[1]

[2]

[3]

[4]